sot89 pnp silicon planar medium power transistor issue 4 - january 1996 j features * suitable for general af applications and class b audio output stages up to 3w * high h fe and low saturation voltage complementary type - bc868 (npn) partmarking details - bc869 - cec bc869-16 - chc bc869-25 - cjc absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -25 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -65 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -25 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -20 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-10 m a collector cut-off current i cbo -10 -1 m a ma v cb = -25v v cb = -25v,t amb =150 o c emitter cut-off current i ebo -10 m a v eb =-5v collector-emitter saturation voltage v ce(sat) -0.5 v i c =-1a,i b =-100ma* base-emitter turn-on voltage v be(on) -1.0 v i c =-1a, v ce =-1v* static forward current transfer ratio h fe bc869-16 bc869-25 50 85 60 100 160 375 250 375 i c =-5ma, v ce =-10v* i c =-500ma, v ce =-1v* i c =-1a, v ce =-1v* i c =-500ma, v ce =-1v* i c =-500ma, v ce =-1v* transition frequency f t 60 mhz i c =-10ma, v ce =-5v f = 35mhz output capacitance c obo 45 pf v cb =-10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fmmt549 datasheet bc869 3 - 12 c c b e sot89
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